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PIP3201-A Datasheet(PDF) 11 Page - NXP Semiconductors |
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PIP3201-A Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 13 page Philips Semiconductors Product data PowerMOS transistor PIP3201-A TOPFET high side switch Fig.28. Short circuit load threshold voltage. V BL(TO) = f(VBG); conditions -40˚C ≤ Tmb ≤ 150˚C Fig.29. Typical output capacitance. T mb = 25 ˚C C bl = f(VBL); conditions f = 1 MHz, VIG = 0 V Fig.30. Typical reverse battery characteristic. I G = f(VBG); conditions IL = 0 A, Tj = 25 ˚C Fig.31. Typical overload current, V BL = 8V. I L = f(Tj); parameter VBG = 13V;tp = 300 µs Fig.32. Typical short circuit load threshold voltage. V BL(TO) = f(Tj); condition VBG = 16 V Fig.33. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T 0 5 10 15 20 25 30 35 0 1020 304050 VBG/ V VBL(TO) / V min. max. typ. 25˚C 30 35 40 45 50 -50 0 50 100 150 200 Tj / OC IL(lim) / A 0 1020304050 10 nF 1nF 100pF CBL VBL / V VBL(TO) / V 10.0 10.2 10.4 10.6 10.8 11.0 11.2 11.4 11.6 11.8 12.0 -50 0 50 100 150 200 Tj / OC IG / mA -200 -150 -100 -50 0 -20 -15 -10 -5 0 VBG / V D = tp tp T T P t D Zth j-mb ( K / W ) t / s 1e+02 1e-01 1e-03 1e-05 1e-07 1e+01 1e-03 1e-02 1e-01 1e+00 D = 0.5 0.2 0.1 0.05 0.02 0 May 2001 11 Rev 1.010 |
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