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MAAPGM0076-DIE Datasheet(PDF) 1 Page - Tyco Electronics |
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MAAPGM0076-DIE Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 7 page ![]() Amplifier, Power, 16W 1.3-2.5 GHz MAAPGM0076-DIE M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Rev B Preliminary Datasheet 1 1. TB = MMIC Base Temperature 2. Adjust VGG between –2.6 and –1.5V to achieve specified Idq. Parameter Symbol Typical Units Bandwidth f 1.3-2.5 GHz Output Power POUT 42 dBm 1-dB Compression Point P1dB 41 dBm Small Signal Gain G 25 dB Input VSWR VSWR 1.3:1 Gate Current IGG 33 mA Drain Current IDD 5.2 A Output VSWR VSWR 1.6:1 2nd Harmonic 2f 25 dBc Power Added Efficiency PAE 29 % Features ♦ 16 Watt Saturated Output Power Level ♦ Variable Drain Voltage (8-10V) Operation ♦ MSAG™ Process Description The MAAPGM0076-DIE is a 2-stage 16 W power amplifier with on-chip bias net- works. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power appli- cations. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing proc- esses, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyim- ide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal for- mulation prevents hydrogen poisoning when employed in hermetic packaging. Electrical Characteristics: TB = 45°C 1, Z 0 = 50 Ω, VDD = 10V, IDQ = 3.8A 2, P in = 24 dBm, RG = 30Ω Primary Applications ♦ Radio Communications ♦ SatCom Also Available in: Description Ceramic Package Sample Board (Die) Sample Board (Pkg) Mechanical Sample (Die) Part Number MAAP-000076-PKG001 MAAP-000076-SMB004 MAAP-000076-SMB001 MAAP-000076-MCH000 |