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MAAPGM0076-DIE Datasheet(PDF) 1 Page - Tyco Electronics

Part No. MAAPGM0076-DIE
Description  Amplifier, Power, 16W 1.3-2.5 GHz
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Maker  MACOM [Tyco Electronics]
Homepage  http://www.macom.com
Logo MACOM - Tyco Electronics

MAAPGM0076-DIE Datasheet(HTML) 1 Page - Tyco Electronics

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Amplifier, Power, 16W
1.3-2.5 GHz
MAAPGM0076-DIE
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Rev B
Preliminary Datasheet
1
1.
TB = MMIC Base Temperature
2.
Adjust VGG between –2.6 and –1.5V to achieve specified Idq.
Parameter
Symbol
Typical
Units
Bandwidth
f
1.3-2.5
GHz
Output Power
POUT
42
dBm
1-dB Compression Point
P1dB
41
dBm
Small Signal Gain
G
25
dB
Input VSWR
VSWR
1.3:1
Gate Current
IGG
33
mA
Drain Current
IDD
5.2
A
Output VSWR
VSWR
1.6:1
2nd Harmonic
2f
25
dBc
Power Added Efficiency
PAE
29
%
Features
16 Watt Saturated Output Power Level
Variable Drain Voltage (8-10V) Operation
MSAG™ Process
Description
The MAAPGM0076-DIE is a 2-stage 16 W power amplifier with on-chip bias net-
works. This product is fully matched to 50 ohms on both the input and output. It
can be used as a power amplifier stage or as a driver stage in high power appli-
cations.
Fabricated using M/A-COM’s repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100%
RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing proc-
esses, planar processing of ion implanted transistors, multiple implant capability
enabling power, low-noise, switch and digital FETs on a single chip, and polyim-
ide scratch protection for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the gate metal for-
mulation prevents hydrogen poisoning when employed in hermetic packaging.
Electrical Characteristics: TB = 45°C
1, Z
0 = 50 Ω, VDD = 10V, IDQ = 3.8A
2, P
in = 24 dBm, RG = 30Ω
Primary Applications
Radio Communications
SatCom
Also Available in:
Description
Ceramic Package
Sample Board (Die)
Sample Board (Pkg)
Mechanical Sample (Die)
Part Number
MAAP-000076-PKG001
MAAP-000076-SMB004
MAAP-000076-SMB001
MAAP-000076-MCH000


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