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MAAPGM0053-DIE Datasheet(PDF) 1 Page - Tyco Electronics

Part No. MAAPGM0053-DIE
Description  Amplifier, Distributed Power, 0.5 W 2.0-18.0 GHz
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Maker  MACOM [Tyco Electronics]
Homepage  http://www.macom.com
Logo MACOM - Tyco Electronics

MAAPGM0053-DIE Datasheet(HTML) 1 Page - Tyco Electronics

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Amplifier, Distributed Power, 0.5 W
2.0-18.0 GHz
MAAPGM0053-DIE
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
903217 —
Preliminary Information
1
Features
♦ 0.5 Watt Saturated Output Power Level
♦ Variable Drain Voltage (5-10V) Operation
♦ MSAG™ Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0053-Die is a single stage power amplifier with on-
chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage
or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors,
multiple implant capability enabling power, low-noise, switch and
digital FETs on a single chip, and polyimide scratch protection for
ease of use with automated manufacturing processes. The use of
refractory metals and the absence of platinum in the gate metal for-
mulation prevents hydrogen poisoning when employed in hermetic
packaging.
Parameter
Symbol
Typical
Units
Bandwidth
f
2.0-18.0
GHz
Output Power
POUT
27.0
dBm
1 dB Compression Point
P1dB
26
dB
Small Signal Gain
G
6
dB
Input VSWR
VSWR
1.5:1
Output VSWR
VSWR
1.5:1
Gate Supply Current
IGG
3
mA
Drain Supply Current
IDD
400
mA
Noise Figure
NF
7
dB
1.
TB = MMIC Base Temperature
2.
Adjust VGG between –2.4 and –1.5V to achieve IDQ indicated.
Electrical Characteristics: TB = 40°C
1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 250 mA2, Pin = 22 dBm
Primary Applications
Test Equipment
Electronic Warfare
Radar


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