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MAAPGM0052-DIE Datasheet(PDF) 1 Page - Tyco Electronics

Part No. MAAPGM0052-DIE
Description  Amplifier, Distributed Power 4.0-18.0 GHz
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Maker  MACOM [Tyco Electronics]
Homepage  http://www.macom.com
Logo MACOM - Tyco Electronics

MAAPGM0052-DIE Datasheet(HTML) 1 Page - Tyco Electronics

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Amplifier, Distributed Power
4.0—18.0 GHz
MAAPGM0052-DIE
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
903210 —
Preliminary Information
1
Parameter
Symbol
Typical
Units
Bandwidth
f
4.0-18.0
GHz
Output Power
POUT
26.0
dBm
1dB Compression Point
P1dB
25
dBm
Small Signal Gain
G
13
dB
Input VSWR
VSWR
1.4:1
Output VSWR
VSWR
1.5:1
Gate Supply Current
IGG
4
mA
Drain Supply Current
IDD
600
mA
Noise Figure
NF
6.0
dB
1.
TB = MMIC Base Temperature
2.
Adjust VGG between –2.4 and –1.0V to achieve IDQ indicated.
Electrical Characteristics: TB = 40°C
1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 500 mA2, Pin = 17 dBm, Rg ≈ 100Ω
Primary Applications
Features
♦ 0.5 Watt Saturated Output Power Level
♦ Variable Drain Voltage (5-10V) Operation
♦ GaAs MSAG™ Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0052-Die is a 2-stage distributed power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier stage
or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process,
each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors,
multiple implant capability enabling power, low-noise, switch and
digital FETs on a single chip, and polyimide scratch protection for
ease of use with automated manufacturing processes. The use of
refractory metals and the absence of platinum in the gate metal
formulation prevents hydrogen poisoning when employed in her-
metic packaging.


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