 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
MAAPGM0052-DIE Datasheet(PDF) 1 Page - Tyco Electronics |
|
||||||||||||||||||||||||||||||
MAAPGM0052-DIE Datasheet(HTML) 1 Page - Tyco Electronics |
|
|
1 / 6 page 
Amplifier, Distributed Power 4.0—18.0 GHz MAAPGM0052-DIE M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 903210 — Preliminary Information 1 Parameter Symbol Typical Units Bandwidth f 4.0-18.0 GHz Output Power POUT 26.0 dBm 1dB Compression Point P1dB 25 dBm Small Signal Gain G 13 dB Input VSWR VSWR 1.4:1 Output VSWR VSWR 1.5:1 Gate Supply Current IGG 4 mA Drain Supply Current IDD 600 mA Noise Figure NF 6.0 dB 1. TB = MMIC Base Temperature 2. Adjust VGG between –2.4 and –1.0V to achieve IDQ indicated. Electrical Characteristics: TB = 40°C 1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 500 mA2, Pin = 17 dBm, Rg ≈ 100Ω Primary Applications Features ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage (5-10V) Operation ♦ GaAs MSAG™ Process ♦ Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility Description The MAAPGM0052-Die is a 2-stage distributed power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufac- turing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in her- metic packaging. |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
