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MAAPGM0034-DIE Datasheet(PDF) 1 Page - Tyco Electronics |
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MAAPGM0034-DIE Datasheet(HTML) 1 Page - Tyco Electronics |
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0.5W X/Ku-Band Power Amplifier 8.0-12.5 GHz 8.0-12.5 GHz GaAs MMIC Amplifier RO-P-DS-3019 A Preliminary Information Features ♦ 8.0-12.5 GHz Operation ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ Self-Aligned MSAG® MESFET Process Primary Applications ♦ Point-to-Point Radio ♦ Weather Radar ♦ Military Radar Description The MAAPGM0034-Die is a 2-stage 0.5 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. This process provides polyimide scratch protection. Electrical Characteristics: TB = 40°C 1, Z0 = 50Ω, VDD = 10V, VGG = -2V, Pin = 18 dBm Parameter Typical Units Bandwidth 8.0-12.5 GHz 1-dB Compression Point 26 dBm Small Signal Gain 15 dB Input VSWR 2:1 Gate Current < 2 mA Drain Current < 200 mA Power Added Efficiency 35 % Output Power 28 dBm Output Third Order Intercept 33 dBm Noise Figure 8 dB 2nd Harmonic -28 dBc Symbol f POUT PAE P1dB G Input VSWR IGG IDD OTOI NF 2f 3rd Harmonic 3f -35 dBc 1. TB = MMIC Base Temperature |
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