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MA08509D Datasheet(PDF) 1 Page - Tyco Electronics

Part No. MA08509D
Description  Amplifier, Power, 10W 8.5-10.5 GHz
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Maker  MACOM [Tyco Electronics]
Homepage  http://www.macom.com
Logo MACOM - Tyco Electronics

MA08509D Datasheet(HTML) 1 Page - Tyco Electronics

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Amplifier, Power, 10W
8.5—10.5 GHz
MA08509D
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Rev A
Preliminary Information
Primary Applications
♦ Weather Radar
♦ Airborne Radar
Features
♦ 10 Watt CW Saturated Output Power Level
♦ Variable Drain Voltage (8-10V) Operation
♦ GaAs MSAG™ Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MA08509D is a 3-stage 10 W power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input
and output.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Electrical Characteristics: On-Wafer, Z0 = 50Ω, VDD = 10V, VGG = -4V, Pin = 18 dBm
Parameter
Symbol
Minimum
Typical
Maximum
Units
Bandwidth
f
8.5
10.5
GHz
Saturated Output Power
POUT
39.0
41.0
dBm
Power Added Efficiency
PAE
25
32
%
Small Signal Gain
G
24
27
dB
Input VSWR
VSWR
2.5:1
4:1
Quiescent Gate Current
IGQ
8
20
26
mA
Quiescent Drain Current
IDQ
1.3
2.0
2.5
A
Drain Current @ 10 GHz
IDD
3.9
4.5
A
Harmonics
2f, 3f
< -30
dBc
Also Available in:
Description
Sample Board (Die)
Die on Pedestal
Mechanical Sample (Die)
Part Number
MAAP-008509-SMB004
MAAP-008509-PED000
MAAP-008509-MCH000


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