PHX3N50E datasheet(4/8 Pages) PHILIPS

Part #	PHX3N50E

Description	PowerMOS transistors Avalanche energy rated

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

PowerMOS transistors

PHX3N50E

Avalanche energy rated

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Ths)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V

Fig.3. Safe operating area. T

hs = 25 ˚C

I

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

Z

th j-hs = f(t); parameter D = tp/T

Fig.5. Typical output characteristics.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance.

R

DS(ON) = f(ID); parameter VGS

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

1us

10us

100us

1ms

10ms

100ms

1s

10s

0.001

0.01

0.1

1

10

PHX1N60

tp / sec

Zth(j-hs) K/W

D = 0.5

0.2

0.1

0.05

0.02

D =

tp

T

P

t

D

0

20

40

60

80

100

120

140

Ths / C

ID%

Normalised Current Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

0

5

10

15

20

25

30

0

1

2

3

4

5

6

7

8

PHP3N50

VDS, Drain-Source voltage (Volts)

ID, Drain current (Amps)

5 V

5.5 V

6 V

7 V

10 V

VGS = 4.5 V

Tj = 25 C

1

10

100

1000

10000

0.01

0.1

1

10

100

PHX2N50

VDS, Drain-source voltage (Volts)

ID, Drain current (Amps)

1 ms

100 ms

DC

tp = 10 us

10 ms

RDS(ON)

=

VDS/ID

100 us

0123

45

678

0

1

2

3

4

5

6

PHP3N50

5 V

5.5 V

10 V

ID, Drain current (Amps)

RDS(on), Drain-Source on resistance (Ohms)

4.5 V

VGS = 6 V

7 V

Tj = 25 C

December 1998

4

Rev 1.200

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