Philips Semiconductors

Objective specification

PowerMOS transistor

PHX1N60E

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for F-pack envelopes.

3. Epoxy meets UL94 V0 at 1/8".

10.3

max

3.2

3.0

4.6

max

2.9 max

2.8

seating

plane

6.4

15.8

max

0.6

2.5

2.54

5.08

12

3

3 max.

not tinned

3

0.5

2.5

0.9

0.7

M

0.4

15.8

max.

19

max.

13.5

min.

Recesses (2x)

2.5

0.8 max. depth

1.0 (2x)

1.3

November 1996

4

Rev 1.000