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HAT3021R Datasheet(PDF) 3 Page - Renesas Technology Corp

Part No. HAT3021R
Description  Silicon N/P Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT3021R Datasheet(HTML) 3 Page - Renesas Technology Corp

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HAT3021R
Rev.2.00, Oct.06.2004, page 3 of 10
• P Channel
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
–80
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG = ±100
µA, VDS = 0
Gate to source leak current
IGSS
——
±10
µAVGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
——
–1
µAVDS = –80 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
–2.5
V
VDS = –10 V, I D = –1 mA
RDS(on)
165
210
m
ID = –1.3 A, VGS = –10 V
Note4
Static drain to source on state
resistance
RDS(on)
200
290
m
ID = –1.3 A, VGS = – 4.5 V
Note4
Forward transfer admittance
|yfs|2.0
3.3
S
ID = –1.3 A, VDS = –10 V
Note4
Input capacitance
Ciss
930
pF
Output capacitance
Coss
90
pF
Reverse transfer capacitance
Crss
56
pF
VDS = –10 V
VGS = 0
f = 1MHz
Total gate charge
Qg
16
nC
Gate to source charge
Qgs
2.1
nC
Gate to drain charge
Qgd
2.4
nC
VDD = –25 V
VGS = –10 V
ID = -2.6 A
Turn-on delay time
td(on)
—20—
ns
Rise time
tr
—12—
ns
Turn-off delay time
td(off)
—40—
ns
Fall time
tf
—5.5
ns
VGS = –10 V, ID = –1.3 A
VDD
≈ –30 V
RL = 23.0
Rg = 4.7
Body–drain diode forward voltage
VDF
–0.83
–1.08
V
IF = –2.6 A, VGS = 0
Note4
Body–drain diode reverse
recovery time
trr
30
ns
IF = –2.6 A, VGS = 0
diF/ dt =100A/µs
Notes: 4. Pulse test


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