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HAT3021R Datasheet(PDF) 5 Page - Renesas Technology Corp

Part No. HAT3021R
Description  Silicon N/P Channel Power MOS FET Power Switching
Download  11 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT3021R Datasheet(HTML) 5 Page - Renesas Technology Corp

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HAT3021R
Rev.2.00, Oct.06.2004, page 5 of 10
0.01
0.03 0.1
0.3
1
3
10
100
10
30
3
1
0.3
0.03
0.01
0.1
Drain Current
ID (A)
Forward Transfer Admittance vs.
Drain Current
VDS = 10 V
Pulse Test
25
°C
Tc = –25
°C
75
°C
Case Temperature
Tc
(
°C)
Static Drain to Source on State Resistance
vs. Temperature
250
200
150
100
50
-25
0
25
50
75
100 125 150
0
ID = 0.5 A, 1 A, 2 A
0.5 A, 1 A, 2 A
VGS = 4.5 V
10 V
Pulse Test
1
310
100
10
20
50
010
20
40
50
30
200
500
1000
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
246
8
10
0
20
50
10
2
1
5
0.1
0.2
1
2
10
2
5
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = 50 V
25 V
10 V
ID = 3.4 A
VDS
VGS
tr
td(on)
td(off)
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nC)
Dynamic Input Characteristics
Drain Current
ID (A)
Switching Characteristics
tf
VGS = 10 V, VDD = 30 V
Rg = 4.7
Ω, duty ≤ 1 %
0.5
5
100
di / dt = 100 A /
µs
VGS = 0, Ta = 25°C
VDD = 50 V
25 V
10 V


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