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CM30TF-24H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. CM30TF-24H
Description  MEDIUM POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM30TF-24H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
60
02468
10
0
10
20
30
40
50
12
15
10
9
8
VGE = 20V
Tj = 25°C
7
11
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
60
0
4
8
12
16
20
0
10
20
30
40
50
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
060
4
3
2
1
0
10
20
30
40
50
VCE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
Tj = 25°C
IC = 12A
IC = 60A
IC = 30A
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
10-1
100
102
101
10-2
101
VGE = 0V
Cies
Coes
Cres
10-1
100
COLLECTOR CURRENT, IC, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
100
101
102
102
101
VCC = 600V
VGE = ±15V
RG = 10Ω
Tj = 125°C
td(off)
td(on)
tr
tf
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
100
101
102
102
101
Irr
trr
di/dt = -60A/
µsec
101
100
10-1
Tj = 25°C
GATE CHARGE, QG, (nC)
GATE CHARGE, VGE
20
0
240
16
12
8
4
0
40
80
120
160
200
IC = 30A
VCC = 600V
VCC = 400V
100
102
7
5
3
2
1.0
1.5
2.0
101
7
5
3
2
2.5
3.0
3.5
Tj = 25°C
MITSUBISHI IGBT MODULES
CM30TF-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE


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