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CM30TF-24H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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CM30TF-24H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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Sep.1998 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) 60 02468 10 0 10 20 30 40 50 12 15 10 9 8 VGE = 20V Tj = 25°C 7 11 GATE-EMITTER VOLTAGE, VGE, (VOLTS) TRANSFER CHARACTERISTICS (TYPICAL) 60 0 4 8 12 16 20 0 10 20 30 40 50 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 060 4 3 2 1 0 10 20 30 40 50 VCE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 0 4 8 12 16 20 8 6 4 2 0 Tj = 25°C IC = 12A IC = 60A IC = 30A EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE VS. VCE (TYPICAL) 10-1 100 102 101 10-2 101 VGE = 0V Cies Coes Cres 10-1 100 COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 VCC = 600V VGE = ±15V RG = 10Ω Tj = 125°C td(off) td(on) tr tf EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 Irr trr di/dt = -60A/ µsec 101 100 10-1 Tj = 25°C GATE CHARGE, QG, (nC) GATE CHARGE, VGE 20 0 240 16 12 8 4 0 40 80 120 160 200 IC = 30A VCC = 600V VCC = 400V 100 102 7 5 3 2 1.0 1.5 2.0 101 7 5 3 2 2.5 3.0 3.5 Tj = 25°C MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE |
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