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PHT6N06 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PHT6N06 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 10 page Philips Semiconductors Product specification TrenchMOS ™ transistor PHT6N06T Standard level FET AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive I D = 1.9 A; VDD ≤ 25 V; - - 15 mJ unclamped inductive turn-off V GS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C energy September 1997 3 Rev 1.000 |
Similar Part No. - PHT6N06 |
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Similar Description - PHT6N06 |
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