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PHT4NQ10T Datasheet(PDF) 6 Page - NXP Semiconductors |
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PHT4NQ10T Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page Philips Semiconductors PHT4NQ10T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 31 July 2000 6 of 13 9397 750 07337 © Philips Electronics N.V. 2000. All rights reserved. Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj =25 °C Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. 03aa90 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VDS (V) ID (A) 4.6 V Tj =25oC VGS = 10V 4.8 V 5V 5.5 V 4.4 V 6V 4.2 V 03aa92 0 1 2 3 4 5 6 7 8 9 10 012 3456 78 VGS (V) ID (A) VDS >ID XRDSon Tj =25oC 150oC 03aa91 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 01 234 5678 9 10 ID (A) RDSon (Ω) VGS = 10V Tj =25oC 6V 5.5 V 4.4 V 5V 4.8V 4.6V 03aa29 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -60 -20 20 60 100 140 180 T j ( o C) a a R DSon R DSon 25 C ° () ---------------------------- = |
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