PHT4NQ10T datasheet(6/13 Pages) PHILIPS

Part #	PHT4NQ10T

Description	N-channel enhancement mode field-effect transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PHT4NQ10T

N-channel enhancement mode ﬁeld-effect transistor

Product speciﬁcation

Rev. 01 — 31 July 2000

6 of 13

9397 750 07337

Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Tj =25 °C

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 9.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03aa90

0

1

2

3

4

5

6

7

8

9

10

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

VDS (V)

ID

(A)

4.6 V

Tj =25oC

VGS = 10V

4.8 V

5V

5.5 V

4.4 V

6V

4.2 V

03aa92

0

1

2

3

4

5

6

7

8

9

10

012

3456

78

VGS (V)

ID

(A)

VDS >ID XRDSon

Tj =25oC

150oC

03aa91

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

01

234

5678

9

10

ID (A)

RDSon

(Ω)

VGS = 10V

Tj =25oC

6V

5.5 V

4.4 V

5V

4.8V

4.6V

03aa29

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

-60

-20

20

60

100

140

180

T

j

(

o

C)

a

R

DSon

R

DSon 25 C

°

()

----------------------------

=

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