PHT11N06 datasheet(5/9 Pages) PHILIPS

Part #	PHT11N06

Description	TrenchMOS transistor Logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT11N06LT

Logic level FET

Fig.7. Typical transfer characteristics.

I

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID); conditions: VDS = 25 V

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 5 V

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

0

123

4

0

5

10

15

20

ID/A

VGS/V

Tj/C =

150

25

BUK98xx-55

-100

-50

0

50

100

150

200

0

0.5

1

1.5

2

2.5

Tj / C

VGS(TO) / V

max.

typ.

min.

5

10

15

20

25

1234 56789 10 11 12 13 14 15 16 17 18 19 20

Transconductance, gfs (S)

Drain current, ID (A)

0

0.5

1

1.5

2

2.5

3

1E-05

1E-04

1E-03

1E-02

1E-01

Sub-Threshold Conduction

2%

typ

98%

BUK98XX-55

-100

-50

0

50

100

150

200

0.5

1

1.5

2

2.5

Tmb / degC

Rds(on) normalised to 25degC

a

0.01

0.1

1

10

100

0

0.5

1.0

1.5

2.0

2.5

Ciss

Coss

Crss

VDS/V

January 1998

5

Rev 1.100

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