Philips Semiconductors

Preliminary specification

PowerMOS transistors

PHP9N60E, PHB9N60E, PHW9N60E

Avalanche energy rated

MECHANICAL DATA

Dimensions in mm

Net Mass: 1.4 g

Fig.2. SOT404 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

Fig.3. SOT404 : soldering pattern for surface mounting.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Epoxy meets UL94 V0 at 1/8".

11 max

4.5 max

1.4 max

10.3 max

0.5

15.4

2.5

0.85 max

(x2)

2.54 (x2)

17.5

11.5

9.0

5.08

3.8

2.0

January 1998

5

Rev 1.000