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MAAPGM0079-DIE Datasheet(PDF) 1 Page - Tyco Electronics |
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MAAPGM0079-DIE Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 8 page Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.comfor additional data sheets and product information. Rev A Preliminary Datasheet 1 1. TB = MMIC Base Temperature 2. Adjust VGG between –2.6 and –1.5V to achieve specified Idq. Parameter Symbol Typical Units Bandwidth f 7.5-10.5 GHz Output Power POUT 42 dBm Output Power, 8-10 GHz POUT 43 dBm 1-dB Compression Point P1dB 42 dBm Small Signal Gain G 29 dB Power Added Efficiency PAE 30 % Input VSWR VSWR 2.5:1 Output VSWR VSWR 2.5:1 Gate Current IGG 50 mA Drain Current, under RF Drive IDD 6 A Output Third Order Intercept TOI 48 dBm Output Third Order Intermod, Pout = 39 dBm (DCL) IM3 18.5 dBc Features ♦ 17 Watt Saturated Output Power Level ♦ 20 Watt Saturated Output Power Level over 8-10 GHz Band ♦ Variable Drain Voltage (8-10V) Operation ♦ MSAG™ Process ♦ Robust Stability Description The MAAPGM0079-DIE is a 3 stage 20W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG process features robust silicon-like manufacturing processes, pla- nar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory met- als and the absence of platinum in the gate metal formulation prevents hydrogen poi- soning when employed in hermetic packaging. Electrical Characteristics: TB = 40°C 1, Z 0 = 50 Ω, VDD = 10V, IDQ = 4A 2, P in = 18 dBm, Rg = 20 Ω Primary Applications ♦ SatCom ♦ Commercial Avionics ♦ Radar Also Available in: Description Ceramic Package Sample Board (Die) Sample Board (Pkg) Mechanical Sample (Die) Part Number MAAP-000079-PKG001 MAAP-000079-SMB004 MAAP-000079-SMB001 MAAP-000079-MCH000 |
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