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PHP96NQ03LT Datasheet(PDF) 6 Page - NXP Semiconductors |
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PHP96NQ03LT Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page Philips Semiconductors PHP/PHB/PHD96NQ03LT N-channel enhancement mode field-effect transistor Product data Rev. 03 — 23 October 2001 6 of 14 9397 750 08963 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Tj =25 °CTj =25 °C and 175 °C; VDS > ID xRDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03af12 0 20 40 60 80 0 0.2 0.4 0.6 0.8 1 VDS (V) ID (A) 3 V 5 V Tj = 25 ºC VGS = 2.5 V 10 V 3.5 V 4 V 4.5 V 03af14 0 20 40 60 80 01234 VGS (V) ID (A) VDS > ID x RDSon Tj = 25 ºC 175 ºC 03af13 0 0.004 0.008 0.012 0.016 0 20406080 ID (A) RDSon ( Ω) 4.5 V VGS = 3.5 V Tj = 25 ºC 5V 10 V 4 V 03af18 0 0.4 0.8 1.2 1.6 2 -60 0 60 120 180 Tj (ºC) a a R DSon R DSon 25 C ° () ---------------------------- = |
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