PHP8N50E datasheet(3/10 Pages) PHILIPS

Part #	PHP8N50E

Description	PowerMOS transistors Avalanche energy rated

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

PowerMOS transistors

PHP8N50E, PHB8N50E, PHW8N50E

Avalanche energy rated

ELECTRICAL CHARACTERISTICS

T

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

500

-

V

voltage

∆V

(BR)DSS / Drain-source breakdown

V

DS = VGS; ID = 0.25 mA

-

0.1

-

%/K

∆T

j

voltage temperature

coefficient

R

DS(ON)

Drain-source on resistance

V

GS = 10 V; ID = 4.8 A

-

0.6

0.85

Ω

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 0.25 mA

2.0

3.0

4.0

V

g

fs

Forward transconductance

V

DS = 30 V; ID = 4.8 A

3.5

6

-

S

I

DSS

Drain-source leakage current V

DS = 500 V; VGS = 0 V

-

1

25

µA

V

DS = 400 V; VGS = 0 V; Tj = 125 ˚C

-

40

250

µA

I

GSS

Gate-source leakage current V

GS = ±30 V; VDS = 0 V

-

10

200

nA

Q

g(tot)

Total gate charge

I

D = 8.5 A; VDD = 400 V; VGS = 10 V

-

55

80

nC

Q

gs

Gate-source charge

-

5.5

7

nC

Q

gd

Gate-drain (Miller) charge

-

30

45

nC

t

d(on)

Turn-on delay time

V

DD = 250 V; RD = 30 Ω;

-

18

-

ns

t

r

Turn-on rise time

R

G = 9.1 Ω

-37

-

ns

t

d(off)

Turn-off delay time

-

80

-

ns

t

f

Turn-off fall time

-

36

-

ns

L

d

Internal drain inductance

Measured from tab to centre of die

-

3.5

-

nH

L

d

Internal drain inductance

Measured from drain lead to centre of die

-

4.5

-

nH

(SOT78 and SOT429 packages only)

L

s

Internal source inductance

Measured from source lead to source

-

7.5

-

nH

bond pad

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

960

-

pF

C

oss

Output capacitance

-

140

-

pF

C

rss

Feedback capacitance

-

80

-

pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

T

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

I

S

Continuous source current

T

mb = 25˚C

-

8.5

A

(body diode)

I

SM

Pulsed source current (body

T

mb = 25˚C

-

34

A

diode)

V

SD

Diode forward voltage

I

S = 8.5 A; VGS = 0 V

-

1.2

V

t

rr

Reverse recovery time

I

S = 8.5 A; VGS = 0 V; dI/dt = 100 A/µs

-

440

-

ns

Q

rr

Reverse recovery charge

-

6.4

-

µC

December 1998

3

Rev 1.300

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