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PHP8N50E Datasheet(PDF) 3 Page - NXP Semiconductors |
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PHP8N50E Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 10 page Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 500 - - V voltage ∆V (BR)DSS / Drain-source breakdown V DS = VGS; ID = 0.25 mA - 0.1 - %/K ∆T j voltage temperature coefficient R DS(ON) Drain-source on resistance V GS = 10 V; ID = 4.8 A - 0.6 0.85 Ω V GS(TO) Gate threshold voltage V DS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V g fs Forward transconductance V DS = 30 V; ID = 4.8 A 3.5 6 - S I DSS Drain-source leakage current V DS = 500 V; VGS = 0 V - 1 25 µA V DS = 400 V; VGS = 0 V; Tj = 125 ˚C - 40 250 µA I GSS Gate-source leakage current V GS = ±30 V; VDS = 0 V - 10 200 nA Q g(tot) Total gate charge I D = 8.5 A; VDD = 400 V; VGS = 10 V - 55 80 nC Q gs Gate-source charge - 5.5 7 nC Q gd Gate-drain (Miller) charge - 30 45 nC t d(on) Turn-on delay time V DD = 250 V; RD = 30 Ω; - 18 - ns t r Turn-on rise time R G = 9.1 Ω -37 - ns t d(off) Turn-off delay time - 80 - ns t f Turn-off fall time - 36 - ns L d Internal drain inductance Measured from tab to centre of die - 3.5 - nH L d Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH (SOT78 and SOT429 packages only) L s Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 960 - pF C oss Output capacitance - 140 - pF C rss Feedback capacitance - 80 - pF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current T mb = 25˚C - - 8.5 A (body diode) I SM Pulsed source current (body T mb = 25˚C - - 34 A diode) V SD Diode forward voltage I S = 8.5 A; VGS = 0 V - - 1.2 V t rr Reverse recovery time I S = 8.5 A; VGS = 0 V; dI/dt = 100 A/µs - 440 - ns Q rr Reverse recovery charge - 6.4 - µC December 1998 3 Rev 1.300 |
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