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STTH806DTI Datasheet(PDF) 1 Page - STMicroelectronics |
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STTH806DTI Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 6 page  ® 1/6 MAIN PRODUCT CHARACTERISTICS IF(AV) 8 A VRRM 600 V Tj 150°C VF (typ) 2.24 V IRM typ.) 4 A trr (max) 13 ns STTH806DTI Tandem 600V HYPERFAST BOOST DIODE ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward voltage 14 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 180 A Ipeak Peak current waveform δ = 0.15 Tc = 130°C 17 A Tstg Storage temperature range -65 to + 150 °C Tj Maximum operating junction temperature + 150 °C 1 2 Insulated TO-220AC 2 1 June 2005 REV. 4 FEATURES AND BENEFITS ■ Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions ■ Designed for high dI/dt operation. Hyperfast recovery current to compete with SIC devices. Allows downsizing of mosfet and heatsinks ■ Internal ceramic insulated devices with equal thermal conditions for both 300V diodes ■ Insulation (2500VRMS) allows placement on same heatsink as MOSFET and flexible heatsinking on common or separate heatsink ■ Static and dynamic equilibrium of internal diodes are warranted by design ■ Package capacitance: C=7pF Order Codes Part Number Marking STTH806DTI STTH806DTI DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. |
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