PHP73N06T datasheet(3/14 Pages) PHILIPS

Part #	PHP73N06T

Description	N-channel enhancement mode field-effect transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PHP73N06T; PHB73N06T

N-channel enhancement mode ﬁeld-effect transistor

Product speciﬁcation

Rev. 01 — 12 March 2001

3 of 14

9397 750 08107

VGS ≥ 5V

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature.

Tmb =25 °C; IDM is single pulse

Unclamped inductive load; VDD ≤ 25 V; RGS =50 Ω;

VGS = 5 V; starting Tj =25 °C and 150 °C

Fig 3.

Safe operating area; continuous and peak drain

currents as a function of drain-source voltage.

Fig 4.

Non-repetitive avalanche ruggedness current

as a function of pulse duration.

03aa16

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

200

P

der

T

mb

(

o

C)

(%)

03aa24

0

20

40

60

80

100

120

0

25

50

75

100

125

150

175

200

I

der

(%)

T

mb

(

o

C)

P

der

P

tot

P

tot 25 C

°

()

----------------------

100%

×

=

I

der

I

D

I

D25 C

°

()

-------------------

100%

×

=

RDSon = VDS / ID

103

102

10

1

ID

(A)

1

10

102

VDS (V)

tp =

1

µs

10

µs

100

µs

1 ms

10 ms

100 ms

D.C.

tp

T

P

t

T

δ =

003aaa083

102

10

1

Tj prior to avalanche = 150

o

C

25 oC

IAS

(A)

tp ms

10

1

10-1

10-2

10-3

003aaa085

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