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PHP73N06T Datasheet(PDF) 5 Page - NXP Semiconductors |
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PHP73N06T Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page Philips Semiconductors PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 12 March 2001 5 of 14 9397 750 08107 © Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V 55 −− V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 10 Tj =25 °C 234V Tj = 175 °C1 −− V IDSS drain-source leakage current VDS =55V; VGS =0V Tj =25 °C − 0.05 10 µA Tj = 175 °C −− 500 µA IGSS gate-source leakage current VGS = ±20 V; VDS =0V − 2 100 nA RDSon drain-source on-state resistance VGS = 10 V; ID =25A; Figure 8 and 9 Tj =25 oC − 12 14 m Ω Tj = 175 °C −− 28 m Ω Dynamic characteristics Qg(tot) total gate charge ID = 50 A; VDD =44V; VGS =10V; Figure 15 − 54 − nC Qgs gate-source charge − 10 − nC Qgd gate-drain (Miller) charge − 19 − nC Ciss input capacitance VGS =0V; VDS =25V; f = 1 MHz; Figure 13 − 1848 2464 pF Coss output capacitance − 421 506 pF Crss reverse transfer capacitance − 231 317 pF td(on) turn-on delay time VDD =30V; RD = 1.2 Ω; VGS =5V; RG =10 Ω − 17 26 ns tr rise time − 79 119 ns td(off) turn-off delay time − 57 80 ns tf fall time − 51 71 ns Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 14 − 0.85 1.2 V trr reverse recovery time IS =73A; dIS/dt = −100 A/µs; VGS = −10 V; VR =30V − 54 − ns Qr recovered charge − 0.12 −µC |
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