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LH28F320BFB-PBTL60 Datasheet(PDF) 4 Page - Sharp Corporation |
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LH28F320BFB-PBTL60 Datasheet(HTML) 4 Page - Sharp Corporation |
4 / 37 page LHF32FB7 2 LH28F320BFB-PBTL60 32Mbit (2Mbit ×16) Page Mode Dual Work Flash MEMORY 32M density with 16Bit I/O Interface High Performance Reads • 60/25ns 8-Word Page Mode Configurative 4-Plane Dual Work • Flexible Partitioning • Read operations during Block Erase or (Page Buffer) Program • Status Register for Each Partition Low Power Operation • 2.7V Read and Write Operations • VCCQ for Input/Output Power Supply Isolation • Automatic Power Savings Mode Reduces ICCR in Static Mode Enhanced Code + Data Storage • 5 µs Typical Erase/Program Suspends OTP (One Time Program) Block • 4-Word Factory-Programmed Area • 4-Word User-Programmable Area High Performance Program with Page Buffer • 16-Word Page Buffer • 5 µs/Word (Typ.) at 12V V PP Operating Temperature 0 °C to +70°C CMOS Process (P-type silicon substrate) Flexible Blocking Architecture • Eight 4K-word Parameter Blocks • Sixty-three 32K-word Main Blocks • Bottom Parameter Location Enhanced Data Protection Features • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Absolute Protection with VPP≤VPPLK • Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automated Erase/Program Algorithms • 3.0V Low-Power 11µs/Word (Typ.) Programming • 12V No Glue Logic 9 µs/Word (Typ.) Production Programming and 0.5s Erase (Typ.) Cross-Compatible Command Support • Basic Command Set • Common Flash Interface (CFI) Extended Cycling Capability • Minimum 100,000 Block Erase Cycles 0.8mm pitch 48-Ball CSP ETOXTM* Flash Technology Not designed or rated as radiation hardened The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends battery life for portable applications. The product provides high performance asynchronous page mode. It allows code execution directly from Flash, thus eliminating time consuming wait states. Furthermore, its newly configurative partitioning architecture allows flexible dual work operation. The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main Blocks that provide maximum flexibility for safe nonvolatile code and data storage. Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP (One Time Program) block provides an area to store permanent code such as a unique number. * ETOX is a trademark of Intel Corporation. Rev. 2.44 |
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