Philips Semiconductors

PHP/PHB/PHD66NQ03LT

N-channel TrenchMOS transistor

Product data

Rev. 02 — 10 December 2001

6 of 14

9397 750 09119

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ag20

0

15

30

45

60

75

0

0.4

0.8

1.2

1.6

2

VDS (V)

ID

(A)

5 V

Tj = 25 ºC

VGS = 3 V

10 V

3.5 V

6 V

4 V

4.5 V

03ag22

0

15

30

45

60

75

012345

(A)

175 ºC

03ag21

0

0.004

0.008

0.012

0.016

0.02

0

1530

456075

(

Ω)

5V

10 V

6 V

03af18

0

0.4

0.8

1.2

1.6

2

-60

0

60

120

180

Tj (ºC)

a

a

R

DSon

R

DSon 25 C

°

()

-----------------------------

=