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MA4AGSW1 Datasheet(PDF) 1 Page - Tyco Electronics |
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MA4AGSW1 Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 6 page Features n Ultra Broad Bandwidth: 50 MHz to 50 GHz n Functional Bandwidth : 50 MHz to 70 GHz n Dual shunt diode configuration n 0.35 dB Insertion Loss, 46 dB Isolation at 50 GHz n Low Current consumption: -5 V for Low Loss State +10 mA for Isolation State n M/A-COM’s unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection Description M/A-COM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide anode enhanced, SPST PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode resistance than conventional GaAs processes. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and extremely fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility. Applications The low capacitance of the PIN diodes used makes it ideal for use in microwave and millimeter wave switch designs, where ultra low insertion loss is required. The very high shunt conductance of the diodes dramatically improves isolation at millimeter wave frequencies. These AlGaAs PIN switches are used in switching arrays for radar systems, high-speed ECM circuits, and millimeter wave measurement instrumentation. AlGaAs SPST Reflective PIN Diode Switch V 1.00 MA4AGSW1 Layout Absolute Maximum Ratings 1 @ TA = +25 °C (Unless otherwise specified) Parameter Maximum Rating Operating Temperature -55 °C to +125 °C Storage Temperature -65 °C to +150 °C Incident C.W. RF Power + 30 dBm @ -5 V Reverse Voltage 25 V Bias Current 30 mA per Diode 1. Exceeding any of these values may result in permanent damage Nominal Chip Dimensions Chip Dimensions ( µm) X Y Chip 780 650 Pad Dimensions ( µm) X Y RF 100 100 Pad Locations ( µm) X Y J1 0 0 J2 +530 0 Pad Locations Relative to J1 |
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