AlGaAs Flip-Chip PIN Diode

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V1

MA4AGP907

Features

• Low Series Resistance, 3 Ω

• Ultra Low Capacitance, 25 fF

• High Switching Cutoff Frequency, 40 GHz

• 2 Nanosecond Switching Speed

• Can be Driven by Buffered TTL

• Silicon Nitride Passivation

• Polyamide Scratch Protection

Description and Applications

M/A-COM's MA4AGP907 is an Aluminum Gallium

Arsenide Flip-Chip PIN diode. These devices are

fabricated on OMCVD epitaxial wafers using a

process designed for high device uniformity and

extremely low parasitics. The diodes exhibit an

extremely low RC Product, ( 0.1 ps ) and 2 nS

switching characteristics. The useable frequency

range is 100 MHz to 40 GHz.

They are fully passivated with silicon nitride and

have an additional layer of a polymer for scratch

protection. The protective coatings prevent damage

to the junction and the anode airbridge during handling.

The 25 fF capacitance of the MA4AGP907 is

useable for mmwave switch and switched phase

shifter applications. This diode is designed for use in

pulsed or CW applications, where single digit nS

switching speed is required. For surface mount

assembly, the low capacitance of the MA4AGP907

makes it ideal for use in microwave multithrow

switch assemblies, where the series capacitance of

each “off” port adversely loads the input and affects

VSWR.

Absolute Maximum Ratings @ 25 °C

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1. Operation of this device above any one of these parameters

may cause permanent damage.

Package Outline

(Top View Shown Is With Diode

Junction Up)

Parameter

Maximum Rating

Operating Temperature

-65 °C to +125 °C

Storage Temperature

-65 °C to +150 °C

JunctionTemperature

+175 °C

Dissipated RF & DC Power

50 mW

RF C.W. Incident Power

+ 23 dBm C. W.

Mounting Temperature

+300 °C for 10 sec.

Cathode