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PHP54N06T Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. PHP54N06T
Description  N-channel enhancement mode field-effect transistor
Download  13 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP54N06T Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 14 February 2001
5 of 13
9397 750 08022
© Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
−−
V
Tj = −55 °C50
−−
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Figure 9
Tj =25 °C2
3
4
V
Tj = 175 °C1
−−
V
Tj = −55 °C
−−
4.4
V
IDSS
drain-source leakage current
VDS = 55 V; VGS =0V
Tj =25 °C
0.05
10
µA
Tj = 175 °C
−−
500
µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Figure 7 and 8
Tj =25 °C
17
20
m
Tj = 175 °C
−−
40
m
Dynamic characteristics
Qg(tot)
total gate charge
VDD = 44 V; ID =40A;
VGS =10V; Figure 14
36
nC
Qgs
gate-source charge
8.4
nC
Qgd
gate-drain (Miller) charge
11.5
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
1200
1592
pF
Coss
output capacitance
290
356
pF
Crss
reverse transfer capacitance
179
240
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 Ω;
VGS =10V; RG =10 Ω;
15
ns
tr
rise time
74
ns
td(off)
turn-off delay time
70
ns
tf
fall time
40
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die
3.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH


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