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PHP4N50E Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PHP4N50E
Description  PowerMOS transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP4N50E Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Objective specification
PowerMOS transistor
PHP4N50E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
field-effect power transistor in a
plastic
envelope
featuring
high
V
DS
Drain-source voltage
500
V
avalanche energy capability, stable
I
D
Drain current (DC)
5.3
A
blocking voltage, fast switching and
P
tot
Total power dissipation
100
W
high thermal cycling performance
R
DS(ON)
Drain-source on-state resistance
1.5
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS),
motor control
circuits
and
general
purpose
switching applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
500
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-
500
V
±V
GS
Gate-source voltage
-
30
V
I
D
Drain current (DC)
T
mb =
25 ˚C
-
5.3
A
T
mb = 100 ˚C
-
3.3
A
I
DM
Drain current (pulse peak
T
mb =
25 ˚C
-
21
A
value)
I
DR
Source-drain diode current
T
mb =
25 ˚C
-
5.3
A
(DC)
I
DRM
Source-drain diode current
T
mb =
25 ˚C
-
21
A
(pulse peak value)
P
tot
Total power dissipation
T
mb =
25 ˚C
-
100
W
T
stg
Storage temperature
-55
150
˚C
T
j
Junction temperature
-
150
˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D = 5.3 A; VDD ≤ 50 V; VGS = 10 V;
unclamped inductive turn-off
R
GS = 50 Ω
energy
T
j = 25˚C prior to surge
-
280
mJ
T
j = 100˚C prior to surge
-
44
mJ
W
DSR
1
Drain-source repetitive
I
D = 5.3 A; VDD ≤ 50 V; VGS = 10 V;
-
7.4
mJ
unclamped inductive turn-off
R
GS = 50 Ω; Tj ≤ 150 ˚C
energy
Pulse width and frequency limited by T
j(max)
12 3
tab
d
g
s
October 1996
1
Rev 1.000


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