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PHP47NQ10T Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. PHP47NQ10T
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP47NQ10T Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 16 May 2001
2 of 14
9397 750 08243
© Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
100
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
47
A
Ptot
total power dissipation
Tmb =25 °C
166
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =10V; ID = 25 A
20
28
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
100
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20kΩ−
100
V
VGS
gate-source voltage (DC)
−±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V
Figure 2 and 3
47
A
Tmb = 100 °C; VGS =10V
Figure 2
33
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs;
Figure 3
187
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
166
W
Tstg
storage temperature
−55
175
°C
Tj
operating junction temperature
−55
175
°C
Source-drain diode
IS
source (diode forward) current
(DC)
Tmb =25 °C
47
A
ISM
peak source (diode forward)
current
Tmb =25 °C; pulsed; tp ≤ 10 µs
187
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load;
IAS = 30 A; tp = 0.1 ms; VDD ≤ 25 V;
RGS =50 Ω; VGS = 5 V; starting
Tj =25 °C; Figure 4
45
mJ


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