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PHP47NQ10T Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. PHP47NQ10T
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP47NQ10T Datasheet(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 16 May 2001
6 of 14
9397 750 08243
© Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS > ID × RDSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
180
160
140
120
100
80
60
40
20
0
02
4
6
8
10
VGS = 10 V
20 V
4.5 V
5.0 V
5.5 V
6.0 V
6.5 V
7.0 V
7.5 V
8.0 V
003aaa100
ID
(A)
VDS (V)
o
Tj = 175
o
C
25
o
C
100
80
60
40
20
0
02
4
6
8
ID
(A)
VGS (V)
003aaa101
VGS = 5.5 V
6.0 V
6.5 V
7.0 V
7.5 V
10 V
8.0 V
60
55
50
45
40
35
30
25
20
15
5
25
45
65
85
105
125
ID (A)
(m
Ω)
65
RDSon
003aaa102
-20
20
60
100
-60
140
180
Tj (
o
C)
1.0
2.0
0
a
1.2
1.4
1.6
1.8
0.8
0.6
0.4
0.2
003aaa103
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=


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