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PHP33N10 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PHP33N10 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification PowerMOS transistor PHP33N10 Fig.7. Typical transfer characteristics. I D = f(VGS); parameter Tj Fig.8. Typical transconductance. g fs = f(ID); parameter Tj Fig.9. Normalised drain-source on-state resistance. a = R DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 17 A; VGS = 10 V Fig.10. Gate threshold voltage. V GS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS Fig.11. Sub-threshold drain current. I D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Fig.12. Typical capacitances, C iss, Coss, Crss. C = f(V DS); conditions: VGS = 0 V; f = 1 MHz 0 2 4 6 8 10 BUK456-100A VGS / V ID / A 70 60 50 40 30 20 10 0 Tj / C = 25 150 -60 -20 20 60 100 140 180 Tj / C VGS(TO) / V 4 3 2 1 0 max. typ. min. 0 20 40 60 BUK456-100A ID / A gfs / S 20 10 0 0 1 2 3 4 VGS / V ID / A 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 SUB-THRESHOLD CONDUCTION typ 2 % 98 % -60 -20 20 60 100 140 180 Tj / C Normalised RDS(ON) = f(Tj) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 a 0 20 40 VDS / V C / pF Ciss Coss Crss 10 100 1000 10000 BUK4y6-100 April 1998 4 Rev 1.100 |
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