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PHP2N60E Datasheet(PDF) 9 Page - NXP Semiconductors |
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PHP2N60E Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 10 page Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated MECHANICAL DATA Dimensions in mm : Net Mass: 1.4 g Fig.22. SOT428 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm Fig.23. SOT428 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". 6.22 max 2.38 max 0.93 max 6.73 max 0.3 10.4 max 0.5 0.8 max (x2) 2.285 (x2) 0.5 seating plane 1.1 0.5 min 5.4 4 min 4.6 1 2 3 tab 7.0 7.0 2.15 2.5 4.57 1.5 August 1998 9 Rev 1.100 |
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