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PHP212 Datasheet(PDF) 7 Page - NXP Semiconductors |
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PHP212 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page 1997 Jun 18 7 Philips Semiconductors Product specification Dual P-channel enhancement mode MOS transistor PHP212 Fig.6 Capacitance as a function of drain-source voltage; typical values. handbook, halfpage 0 −4 −8 −12 −16 −20 1250 0 1000 750 500 250 MGG352 C (pF) VDS (V) (1) (2) (3) VGS = 0; f = 1 MHz; Tj =25 °C. (1) Ciss. (2) Coss. (3) Crss. Fig.7 Output characteristics; typical values. handbook, halfpage 0 −4 −8 −12 0 −16 −12 −8 −4 MGG353 ID (A) VDS (V) (4) (5) (6) (1) (2) (3) Tamb =25 °C; tp =80 µs; δ =0. (1) VGS = −10 V. (2) VGS = −5V. (3) VGS = −4.5 V. (4) VGS = −4V. (5) VGS = −3.5 V. (6) VGS = −3V. Fig.8 Transfer characteristic; typical value. VDS = −10 V; Tamb =25 °C; tp =80 µs; δ =0. handbook, halfpage 0 −2 −4 −6 MGG354 −8 −16 −12 0 −4 VGS (V) ID (A) Fig.9 Gate-source voltage and drain-source voltage as functions of total gate charge; typical values. handbook, halfpage 04 16 −16 −12 −4 0 −8 812 MGG355 (1) (2) VDS, VGS (V) QG (nC) VDD = −12.5 V; ID = −2 A; Tamb =25 °C. (1) VDS. (2) VGS. |
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