PHP212 datasheet(7/12 Pages) PHILIPS

Part #	PHP212

Description	Dual P-channel enhancement mode MOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 12 page

1997 Jun 18

7

Philips Semiconductors

Product speciﬁcation

Dual P-channel enhancement mode

MOS transistor

PHP212

Fig.6

Capacitance as a function of drain-source

voltage; typical values.

handbook, halfpage

0

−4

−8

−12

−16

−20

1250

0

1000

750

500

250

MGG352

C

(pF)

VDS (V)

(1)

(2)

(3)

VGS = 0; f = 1 MHz; Tj =25 °C.

(1) Ciss.

(2) Coss.

(3) Crss.

Fig.7 Output characteristics; typical values.

handbook, halfpage

0

−4

−8

−12

0

−16

−12

−8

−4

MGG353

ID

(A)

VDS (V)

(4)

(5)

(6)

(1)

(2)

(3)

Tamb =25 °C; tp =80 µs; δ =0.

(1) VGS = −10 V.

(2) VGS = −5V.

(3) VGS = −4.5 V.

(4) VGS = −4V.

(5) VGS = −3.5 V.

(6) VGS = −3V.

Fig.8 Transfer characteristic; typical value.

VDS = −10 V; Tamb =25 °C; tp =80 µs; δ =0.

handbook, halfpage

0

−2

−4

−6

MGG354

−8

−16

−12

0

−4

VGS (V)

ID

(A)

Fig.9

Gate-source voltage and drain-source

voltage as functions of total gate charge;

typical values.

handbook, halfpage

04

16

−16

−12

−4

0

−8

812

MGG355

(1)

(2)

VDS, VGS

(V)

QG (nC)

VDD = −12.5 V; ID = −2 A; Tamb =25 °C.

(1) VDS.

(2) VGS.

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