Philips Semiconductors

Product specification

PowerMOS transistor

PHP20N06E

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

UNIT

field-effect power transistor in a plastic

envelope.

V

DS

Drain-source voltage

60

V

The device is intended for use in

I

D

Drain current (DC)

22

A

Switched Mode Power Supplies

P

tot

Total power dissipation

75

W

(SMPS), motor control, welding, DC/DC

T

j

Junction temperature

175

˚C

and AC/DC converters, and in

R

DS(ON)

Drain-source on-state

0.08

Ω

automotive and general purpose

resistance

switching applications.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

gate

2

drain

3

source

tab

drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Drain-source voltage

-

-

60

V

V

DGR

Drain-gate voltage

R

-60

V

±V

GS

Gate-source voltage

-

-

30

V

I

D

Drain current (DC)

T

25 ˚C

-

22

A

I

D

Drain current (DC)

T

-

15

A

I

DM

Drain current (pulse peak value)

T

25 ˚C

-

88

A

P

tot

Total power dissipation

T

25 ˚C

-

75

W

T

stg

Storage temperature

-

- 55

175

˚C

T

j

Junction temperature

-

-

175

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance junction to

-

-

2

K/W

mounting base

R

th j-a

Thermal resistance junction to

-

60

-

K/W

ambient

12 3

tab

d

g

s

August 1996

1

Rev 1.000