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MCT6H Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. MCT6H
Description  Optocoupler, Phototransistor Output, Dual Channel
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

MCT6H Datasheet(HTML) 1 Page - Vishay Siliconix

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MCT6H / MCT62H
Document Number 83525
Rev. 1.4, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
8
76
5
12
3
4
17202_1
C
Pb
Pb-free
e3
Optocoupler, Phototransistor Output, Dual Channel
Features
• Current Transfer Ratio (CTR) of typical 100 %
• Isolation test voltage VISO = 5000 VRMS
• Low temperature coefficient of CTR
• Low coupling capacitance of typical 0.3 pF
• Wide ambient temperature range
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E76222 System Code U, Double
Protection
Applications
Galvanically separated circuits
Non-interacting switches
Description
The MCT6H and MCT62H consist of a phototransis-
tor optically coupled to a gallium arsenide infrared-
emitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe, provid-
ing a fixed distance between input and output for high-
est safety requirements.
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Part
Remarks
MCT6H
CTR > 50 %, DIP-8
MCT62H
CTR > 100 %, DIP-8
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
VR
6V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 µsIFSM
1.5
A
Power dissipation
Pdiss
100
mW
Junction temperature
Tj
125
°C
Parameter
Test condition
Symbol
Value
Unit
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Pdiss
150
mW
Junction temperature
Tj
125
°C


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