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MCT6H Datasheet(PDF) 1 Page - Vishay Siliconix |
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MCT6H Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 7 page ![]() MCT6H / MCT62H Document Number 83525 Rev. 1.4, 26-Oct-04 Vishay Semiconductors www.vishay.com 1 8 76 5 12 3 4 17202_1 C Pb Pb-free e3 Optocoupler, Phototransistor Output, Dual Channel Features • Current Transfer Ratio (CTR) of typical 100 % • Isolation test voltage VISO = 5000 VRMS • Low temperature coefficient of CTR • Low coupling capacitance of typical 0.3 pF • Wide ambient temperature range • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E76222 System Code U, Double Protection Applications Galvanically separated circuits Non-interacting switches Description The MCT6H and MCT62H consist of a phototransis- tor optically coupled to a gallium arsenide infrared- emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe, provid- ing a fixed distance between input and output for high- est safety requirements. Order Information For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Part Remarks MCT6H CTR > 50 %, DIP-8 MCT62H CTR > 100 %, DIP-8 Parameter Test condition Symbol Value Unit Reverse voltage VR 6V Forward current IF 60 mA Forward surge current tp ≤ 10 µsIFSM 1.5 A Power dissipation Pdiss 100 mW Junction temperature Tj 125 °C Parameter Test condition Symbol Value Unit Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Pdiss 150 mW Junction temperature Tj 125 °C |