1997 Jun 18

3

Philips Semiconductors

Product specification

P-channel enhancement mode

MOS transistor

PHP125

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

2. Pulse width and duty cycle limited by maximum junction temperature.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage (DC)

−−30

V

gate-source voltage (DC)

−±20

V

drain current (DC)

−−2.5

A

peak drain current

note 2

−−10

A

total power dissipation

−

2.8

W

−

2.4

W

−

1.1

W

storage temperature

−65

+150

°C

operating junction temperature

−65

+150

°C

Source-drain diode

source current (DC)

−−2A

peak pulsed source current

note 2

−−8A

Fig.2 Power derating curve.

handbook, halfpage

0

6

4

2

0

50

100

200

Ptot

(W)

MBG848

150

Ts (

Fig.3 SOAR.

handbook, halfpage

MBG752

ID

(A)

t p

T

P

t

t p

T

1 ms

10 ms

100 ms

100

µs

DC

(1)

tp =

10

µs

−1

−10

−1

VDS (V)

−10