1997 Oct 22

9

Philips Semiconductors

Product specification

Dual N-channel enhancement mode

MOS transistor

PHN205

PACKAGE OUTLINE

UNIT

A

max.

(1)

QZ

y

w

v

θ

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

mm

inches

1.75

0.25

0.10

1.45

1.25

0.25

0.49

0.36

0.25

0.19

5.0

4.8

4.0

3.8

1.27

6.2

5.8

1.05

0.7

0.6

0.7

0.3

8

0

o

o

0.25

0.1

0.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

1.0

0.4

SOT96-1

X

θ

A

D

Q

detail X

E

Z

e

c

L

(A )

3

A

4

5

pin 1 index

1

8

y

076E03S

MS-012AA

0.069

0.010

0.004

0.057

0.049

0.01

0.019

0.014

0.0100

0.0075

0.20

0.19

0.16

0.15

0.050

0.244

0.228

0.028

0.024

0.028

0.012

0.01

0.01

0.041

0.004

0.039

0.016

0

2.5

5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm

SOT96-1

95-02-04

97-05-22