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IS61LV25616 Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part No. IS61LV25616
Description  256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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Maker  ISSI [Integrated Silicon Solution, Inc]
Homepage  http://www.issi.com
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IS61LV25616 Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc

 
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Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
IS61LV25616
ISSI®
CAPACITANCE(1)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-10
-12
-15
Symbol
Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Unit
ICC
Vcc Dynamic Operating
VCC = Max.,
Com.
260
240
220
mA
Supply Current
IOUT = 0 mA, f = fMAX
Ind.
300
280
250
ISB
TTL Standby Current
VCC = Max.,
Com.
85
75
65
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
95
85
75
CE
≥ VIH, f = fMAX.
ISB1
TTL Standby Current
VCC = Max.,
Com.
20
20
20
mA
(TTL Inputs)
VIN = VIH or VIL
Ind.
25
25
25
CE
≥ VIH, f = 0
ISB2
CMOS Standby
VCC = Max.,
Com.
10
10
10
mA
Current (CMOS Inputs)
CE
≥ VCC – 0.2V,
Ind.
15
15
15
VIN
≥ VCC – 0.2V, or
VIN
≤ 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.0
VCC + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND
≤ VIN ≤ VCC
Com.
–11
µA
Ind.
–55
ILO
Output Leakage
GND
≤ VOUT ≤ VCC, 4
Com.
–11
µA
Outputs Disabled
Ind.
–55
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.


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