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PHKD3NQ10T Datasheet(PDF) 3 Page - NXP Semiconductors |
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PHKD3NQ10T Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Dual N-channel TrenchMOS TM transistor PHKD3NQ10T Fig.1. Normalised power dissipation. PD% = 100 ⋅P D/PD 25 ˚C = f(Ta) Fig.2. Normalised continuous drain current. ID% = 100 ⋅I D/ID 25 ˚C = f(Ta); VGS ≥ 10 V Fig.3. Safe operating area I D & IDM = f(VDS); IDM single pulse; parameter tp Fig.4. Transient thermal impedance. Z th j-a = f(t); parameter D = tp/T Fig.5. Typical output characteristics, T j = 25 ˚C. I D = f(VDS) Fig.6. Typical on-state resistance, T j = 25 ˚C. R DS(ON) = f(ID) Normalised Power Derating, PD (%) 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 Ambient temperature, Ta (C) 0.01 0.1 1 10 100 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse width, tp (s) Transient thermal impedance, Zth j-a (K/W) single pulse D = 0.5 0.2 0.1 0.05 0.02 tp D = tp/T D P T Normalised Current Derating, ID (%) 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 Ambient temperature, Ta (C) 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 4.6 V Tj = 25 C VGS = 10V 4.8 V 5 V 5.2 V 8 V 4.4 V 5.4 V 6 V 0.01 0.1 1 10 100 0.1 1 10 100 1000 Drain-Source Voltage, VDS (V) Peak Pulsed Drain Current, IDM (A) D.C. 100 ms 10 ms RDS(on) = VDS/ ID 1 ms tp = 10 us 100 us 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 012 3456 Drain Current, ID (A) Drain-Source On Resistance, RDS(on) (Ohms) VGS = 10V Tj = 25 C 6V 8 V 5.2 V 5.4 V 5 V 4.8V 4.6V August 1999 3 Rev 1.000 |
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