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CPV364M4KPBF Datasheet(PDF) 2 Page - International Rectifier |
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CPV364M4KPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  CPV364M4KPbF 2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 110 170 IC = 13A Qge Gate - Emitter Charge (turn-on) — 14 21 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 49 74 VGE = 15V td(on) Turn-On Delay Time — 50 — tr Rise Time — 30 — TJ = 25°C td(off) Turn-Off Delay Time — 110 170 IC = 13A, VCC = 480V tf FallTime — 91 140 VGE = 15V, RG = 10 Ω Eon Turn-On Switching Loss — 0.56 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.28 — mJ and diode reverse recovery Ets Total Switching Loss — 0.84 1.1 See Fig. 9,10, 18 tsc Short Circuit Withstand Time 10 — — μsVCC = 360V, TJ = 125°C VGE = 15V, RG = 10 Ω , VCPK < 500V td(on) Turn-On Delay Time — 47 — TJ = 150°C, See Fig. 11,18 tr Rise Time — 30 — IC = 13A, VCC = 480V td(off) Turn-Off Delay Time — 250 — VGE = 15V, RG = 10 Ω tf FallTime — 150 — Energy losses include "tail" Ets Total Switching Loss — 1.28 — mJ and diode reverse recovery LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 1600 — VGE = 0V Coes Output Capacitance — 130 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 55 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig. — 74 120 TJ = 125°C 14 IF = 15A Irr Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C See Fig. — 6.5 10 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig. — 220 600 TJ = 125°C 16 di/dt = 200Aμs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 188 — A/μsTJ = 25°C See Fig. During tb — 160 — TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250μA ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.80 2.3 IC = 13A VGE = 15V ––– 1.80 ––– V IC = 24A See Fig. 2, 5 ––– 1.56 1.73 IC = 13A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250μA ΔVGE(th)/ΔTJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE, IC = 250μA gfe Forward Transconductance 11 18 ––– S VCE = 100V, IC = 10A ICES Zero Gate Voltage Collector Current ––– ––– 250 μAVGE = 0V, VCE = 600V ––– ––– 3500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ––– 1.3 1.7 V IC = 15A See Fig. 13 ––– 1.2 1.6 IC = 15A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V |
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