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RA45H8994M1 Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor |
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RA45H8994M1 Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor |
8 / 9 page MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H8994M1 RA45H8994M1 MITSUBISHI ELECTRIC 20 th Dec 2006 8/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Output Power Control: Depending on linearity, the following three methods are recommended to control the output power: a) Non-linear FM modulation at high power operating: By the gate voltages (VGG1 and VGG2). When the gate voltages are close to zero, the nominal output signal (Pout=45W) is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. (On the following, V GG1 has to be kept in 3.4V.) Around VGG2=0V(minimum), the output power and drain current increases substantially. Around VGG2=4V (typical) to VGG2=5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. (On the following, V GG1 has to be kept in 3.4V.) VGG2 is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! |
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