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RA45H8994M1 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. RA45H8994M1
Description  RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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RA45H8994M1 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

   
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA45H8994M1
RA45H8994M1
MITSUBISHI ELECTRIC
20
th Dec 2006
4/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
O U T P UT P O W E R a n d D R A IN CURR E N T
O UT P U T P O W E R a n d DRA IN CUR RE N T
ver s u s D R A IN V O L T A G E
ver s u s D R A IN V O L T A G E
O U T P UT P O W E R a n d D R A IN CURR E N T
O UT P U T P O W E R a n d DRA IN CUR RE N T
ver s u s G A T E V O L T A G E 2
ver s u s G A T E V O L T A G E 2
0
10
20
30
40
50
60
01
23
45
G A T E VOL T AGE V GG 2 (V )
0
2
4
6
8
10
12
f = 896M H z
V
DD = 12. 8V
V
GG 1 =3 . 4 V
P
in = 50m W
IDD
0
10
20
30
40
50
60
012
3
45
GA T E VO L T AG E V GG 2 (V )
0
2
4
6
8
10
12
P
ou t (W )
f = 915M H z
V
DD = 12. 8V
V
GG 1 =3 . 4 V
P
in = 50m W
IDD
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
D R A IN VOL T AGE V DD (V )
0
2
4
6
8
10
12
14
16
18
P
ou t
f = 925M H z
V
GG 1 =3 . 4 V
V
GG 2 =5 V
P
in = 50m W
IDD
0
10
20
30
40
50
60
70
80
90
24
68
1 0
1 2
1 4
1 6
D R A IN VOL T AGE V DD (V )
0
2
4
6
8
10
12
14
16
18
P
ou t
f = 941M H z
V
GG1 =3 . 4 V
V
GG2 =5 V
P
in = 50m W
IDD
P
ou t (d Bm )
P
out (d B m )
P
out (W )
O U T P UT P O W E R a n d D R A I N CURR E N T
O UT P U T P O W E R a n d DRA I N CUR RE N T
ver s u s G A T E V O L T A G E 2
ver s u s G A T E V O L T A G E 2
O U T P UT P O W E R a n d D R A I N CURR E N T
O UT P U T P O W E R a n d DRA I N CUR RE N T
ver s u s G A T E V O L T A G E 2
ver s u s G A T E V O L T A G E 2
O U T P UT P O W E R a n d D R A I N CURR E N T
O UT P U T P O W E R a n d DRA I N CUR RE N T
ver s u s G A T E V O L T A G E 2
ver s u s G A T E V O L T A G E 2
0
10
20
30
40
50
60
01
23
45
G A T E VOL T AGE V GG 2 (V )
0
2
4
6
8
10
12
f = 925M H z
V
DD = 12. 8V
V
GG1 =3 . 4 V
P
in = 50m W
IDD
0
10
20
30
40
50
60
0
1
23
45
GA T E VO L T AG E V GG 2 (V )
0
2
4
6
8
10
12
f = 941M H z
V
DD = 12. 8 V
V
GG 1 =3 . 4 V
P
in = 50m W
IDD
0
10
20
30
40
50
60
01
23
45
G A T E VOL T AGE V GG 2 (V )
0
2
4
6
8
10
12
f = 896M H z
V
DD = 12. 8V
V
GG1 =3 . 4 V
P
in =4 d B m
IDD
0
10
20
30
40
50
60
012
3
4
5
GA T E VO L T AG E V GG 2 (V )
0
2
4
6
8
10
12
f = 915M H z
V
DD = 12. 8V
V
GG 1 =3 . 4 V
P
in =4 d B m
IDD
0
10
20
30
40
50
60
01
23
45
GAT E VO L T AG E V GG 2 (V )
0
2
4
6
8
10
12
f = 925M H z
V
DD = 12. 8V
V
GG1 =3 . 4 V
P
in =4 d B m
IDD
0
10
20
30
40
50
60
012
3
4
5
GA T E VO L T AG E V GG 2 (V )
0
2
4
6
8
10
12
f = 941M H z
V
DD = 12. 8V
V
GG 1 =3 . 4 V
P
in =4 d B m
IDD
P
ou t (d B m )
P
out (W )
P
ou t (W )
P
ou t (d B m )
P
ou t (W )
P
ou t (W )
P
ou t (d B m )
P
ou t (d B m )
P
out (W )
P
ou t (d B m )
P
ou t (W )
P
ou t (d B m )


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