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RA45H8994M1 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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RA45H8994M1 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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MITSUBISHI RF POWER MODULE RoHS COMPLIANCE RA45H8994M1 RA45H8994M1 MITSUBISHI ELECTRIC 20 th Dec 2006 2/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG1=3.4V ± 7%, VGG2<5V, Pin=0W 17 V VGG1 Gate Voltage 1 VGG2<5V, VDD<12.8V, Pin=50mW 4.5 V VGG2 Gate Voltage 2 VGG1=3.4V ± 7%, VDD<12.8V, Pin=50mW 6 V Pin Input Power 100 mW Pout Output Power 60 W Tcase(OP) Operation Case Temperature Range f=896-941MHz, VGG1=3.4V ± 7%, VGG2<5V -30 to +100 °C Tstg Storage Temperature Range -40 to +110 °C The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT F Frequency Range 896 941 MHz Pout 1 Output Power 1 VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW 45 W ηT Total Efficiency VDD=12.8V 33 % 2fo 2 nd Harmonic VGG1=3.4V -40 dBc 3fo 3 nd Harmonic VGG2=5V -40 dBc ρin Input VSWR Pin=50mW 3:1 — IDD Leakage Current VDD=17V, VGG1=VGG2=0V, Pin=0W 1 mA Pout 2 Output Power 2* VDD=15.2V, VGG1=3.4V, VGG2=1V, Pin=4dBm 2 W — Stability VDD=10.0-15.2V, Pin=1-100mW, 1.5<Pout <50W (VGG2 control, VGG1=3.4V), Load VSWR=3:1 No parasitic oscillation — — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=45W (VGG2 control, VGG1=3.4V), Load VSWR=20:1 No degradation or destroy — All parameters, conditions, ratings, and limits are subject to change without notice. *: This is guaranteed as design value. |
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