RA30H2127M-101 datasheet(2/8 Pages) MITSUBISHI

Part #	RA30H2127M-101

Description	RoHS Compliance , 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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2 / 8 page

MITSUBISHI RF POWER MODULE

RoHS COMPLIANCE

RA30H2127M

MITSUBISHI ELECTRIC

24 Jan 2006

2/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

VDD

Drain Voltage

VGG<5V

17

V

VGG

Gate Voltage

VDD<12.5V, Pin=0mW

6

V

Input Power

100

mW

Pout

Output Power

f=210-270MHz,

ZG=ZL=50Ω

45

W

Tcase(OP)

Operation Case Temperature Range

-30 to +110

°C

Tstg

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

210

270

MHz

Pout

Output Power

30

W

η

T

Total Efficiency

40

%

2fo

2

nd Harmonic

-25

dBc

ρ

in

Input VSWR

3:1

—

IGG

Gate Current

VDD=12.5V,

VGG=5V,

Pin=50mW

1

mA

—

Stability

VDD=10.0-15.2V, Pin=25-70mW,

Pout<40W (VGG control), Load VSWR=3:1

No parasitic oscillation

—

Load VSWR Tolerance

VDD=15.2V, Pin=50mW, Pout=30W (VGG control),

Load VSWR=20:1

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.

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RA30H2127M-101 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

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