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PHW9N60E Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHW9N60E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 9 page Philips Semiconductors Product specification PowerMOS transistors PHB9N60E, PHW9N60E Avalanche energy rated AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E AS Non-repetitive avalanche Unclamped inductive load, I AS = 9 A; - 700 mJ energy t p = 0.2 ms; Tj prior to avalanche = 25˚C; V DD ≤ 50 V; RGS = 50 Ω; VGS = 10 V E AR Repetitive avalanche energy 2 I AR = 9 A; tp = 2.5 µs; Tj prior to - 18 mJ avalanche = 25˚C; R GS = 50 Ω; VGS = 10 V I AS, IAR Repetitive and non-repetitive - 9 A avalanche current THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction - - 0.8 K/W to mounting base R th j-a Thermal resistance junction SOT429 package, in free air - 45 - K/W to ambient SOT404 package, pcb mounted, minimum - 50 - K/W footprint ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 600 - - V voltage ∆V (BR)DSS / Drain-source breakdown V DS = VGS; ID = 0.25 mA - 0.1 - %/K ∆T j voltage temperature coefficient R DS(ON) Drain-source on resistance V GS = 10 V; ID = 5 A - 0.68 0.8 Ω V GS(TO) Gate threshold voltage V DS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V g fs Forward transconductance V DS = 30 V; ID = 5 A 4 6.5 - S I DSS Drain-source leakage current V DS = 600 V; VGS = 0 V - 2 100 µA V DS = 480 V; VGS = 0 V; Tj = 125 ˚C - 80 1000 µA I GSS Gate-source leakage current V GS = ±30 V; VDS = 0 V - 10 200 nA Q g(tot) Total gate charge I D = 10 A; VDD = 480 V; VGS = 10 V - 75 100 nC Q gs Gate-source charge - 6.8 12 nC Q gd Gate-drain (Miller) charge - 37 55 nC t d(on) Turn-on delay time V DD = 300 V; RD = 30 Ω; - 11 - ns t r Turn-on rise time R G = 5.6 Ω -32 - ns t d(off) Turn-off delay time - 98 - ns t f Turn-off fall time - 37 - ns L d Internal drain inductance Measured from tab to centre of die - 3.5 - nH L d Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH (SOT429 package only) L s Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 1295 - pF C oss Output capacitance - 163 - pF C rss Feedback capacitance - 86 - pF 2 pulse width and repetition rate limited by T j max. December 1998 2 Rev 1.000 |
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