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RA18H1213G Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. RA18H1213G
Description  RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA18H1213G Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA18H1213G
RA18H1213G
MITSUBISHI ELECTRIC
24 Jan 2006
2/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<5V, ZG=ZL=50Ω
17
V
VGG
Gate Voltage
VDD<12.5V, Pin=0mW, ZG=ZL=50Ω
6
V
Pin
Input Power
300
mW
Pout
Output Power
f=1.24-1.30GHz,
ZG=ZL=50Ω
30
W
Tcase(OP)
Operation Case Temperature Range
f=1.24-1.30GHz, ZG=ZL=50Ω
-30 to +110
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
1.24
1.30
GHz
Pout
Output Power
18
W
η
T
Total Efficiency
20
%
2fo
2
nd Harmonic
-30
ρ
in
Input VSWR
3:1
IGG
Gate Current
VDD=12.5V, VGG=5V, Pin=200mW
1
mA
Gp
Linear power gain
VDD=12.5V, VGG=5V, Pin=10dBm
23
dB
IMD3
3
rd Inter Modulation Distortion
-20
dBc
IMD5
5
th Inter Modulation Distortion
VDD=12.5V, VGG=5V
Delta f=f1-f2=10KHz
Pout=14W P.E.P. (Pin control)
-25
dBc
Stability
VDD=10.0-15.5V, Pin=0-25dBm,
Pout=1 to 18W (VGG control), Load VSWR=3:1
No parasitic oscillation
Load VSWR Tolerance
VDD=15.2V, Pin=200mW,
Pout=18W (VGG control), Load VSWR=8:1
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.


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