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RA07H4047M Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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RA07H4047M Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA07H4047M RA07H4047M MITSUBISHI ELECTRIC 24 Jan 2006 3/8 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, 2 nd, 3 rd HARMONICS versus FREQUENCY and INPUT VSWR versus FREQUENCY OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER 0 2 4 6 8 10 12 14 39 0 40 0 41 0 42 0 43 0 44 0 45 0 46 0 47 0 48 0 FREQUENCY f(MHz) 0 20 40 60 80 100 120 140 VDD=12.5V Pin=20mW Pout @VGG=3.5V η T @Pout=7W ρ in @Pout=7W 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 2 4 6 8 10 f=400MHz, VDD=12.5V, VGG=3.5V Pout IDD Gp 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 2 4 6 8 10 f=430MHz, VDD=12.5V, VGG=3.5V Pout Gp IDD -70 -60 -50 -40 -30 -20 390 400 410 420 430 440 450 460 470 480 FREQUENCY f(MHz) VDD=12.5V Pin=20mW 2 nd @P out=7W 3 rd @Pout=7W OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE versus DRAIN VOLTAGE 0 3 6 9 12 15 18 24 68 10 12 DRAIN VOLTAGE VDD(V) 0 2 4 6 Pout f=400MHz, VGG=3.5V, Pin=20mW IDD 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 2 4 6 8 10 f=450MHz, VDD=12.5V, VGG=3.5V Pout Gp IDD 0 3 6 9 12 15 18 2 4 6 8 10 12 DRAIN VOLTAGE VDD(V) 0 2 4 6 Pout IDD f=430MHz, VGG=3.5V, Pin=20mW 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 2 4 6 8 10 f=470MHz, VDD=12.5V, VGG=3.5V Pout Gp IDD |
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