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RA07H4047M Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. RA07H4047M
Description  RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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RA07H4047M Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA07H4047M
RA07H4047M
MITSUBISHI ELECTRIC
24 Jan 2006
2/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG=0V, Pin=0W
16
V
VDD
Drain Voltage
VGG<3.5V
13.2
V
VGG
Gate Voltage
VDD<12.5V, Pin<20mW
4
V
Pin
Input Power
30
mW
Pout
Output Power
f=400-470MHz,
ZG=ZL=50Ω
10
W
Tcase(OP)
Operation Case Temperature Range
-30 to +90
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
400
470
MHz
Pout
Output Power
VDD=12.5V,VGG=3.5V, Pin=20mW
7
W
η
T
Total Efficiency
40
%
2fo
2
nd Harmonic
-25
dBc
ρ
in
Input VSWR
4:1
IGG
Gate Current
Pout=7W (VGG control),
VDD=12.5V,
Pin=20mW
1
mA
Stability
VDD=7.2-13.2V, Pin=10-30mW, Pout<8W (VGG control),
Load VSWR=4:1
No parasitic oscillation
Load VSWR Tolerance
VDD=13.2V, Pin=20mW, Pout=7.0W (VGG control),
Load VSWR=20:1
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.


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