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RA07H0608M Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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RA07H0608M Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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MITSUBISHI RF POWER MODULE RoHS COMPLIANT RA07H0608M RA07H0608M MITSUBISHI ELECTRIC 24 Jan 2006 3/8 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, 2 nd, 3 rd HARMONICS versus FREQUENCY and INPUT VSWR versus FREQUENCY OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER 0 2 4 6 8 10 12 14 60 65 70 75 80 85 90 FREQUENCY f(MHz) 0 20 40 60 80 100 120 140 VDD=12.5V Pin=30mW Pout @VGG=5V η T @Pout=7W ρ in @Pout=7W 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 1 2 3 4 5 f=68MHz, VDD=12.5V, VGG=5V Pout IDD Gp 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 1 2 3 4 5 f=78MHz, VDD=12.5V, VGG=5V Pout Gp IDD -60 -50 -40 -30 -20 -10 60 65 70 75 80 85 90 FREQUENCY f(MHz) VDD=12.5V Pin=30mW 2 nd @P out=7W 3 rd @Pout=7W OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE versus DRAIN VOLTAGE 0 5 10 15 20 24 6 8 10 12 DRAIN VOLTAGE VDD(V) 0 1 2 3 4 Pout f=68MHz, VGG=5V, Pin=30mW IDD 0 10 20 30 40 50 -15 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) 0 1 2 3 4 5 f=88MHz, VDD=12.5V, VGG=5V Pout Gp IDD 0 5 10 15 20 24 68 10 12 DRAIN VOLTAGE VDD(V) 0 1 2 3 4 Pout f=78MHz, VGG=5V, Pin=30mW IDD |
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