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RA03M8087M Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. RA03M8087M
Description  RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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RA03M8087M Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M8087M
RA03M8087M
MITSUBISHI ELECTRIC
24 Jan 2006
2/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<3.5V
9.2
V
VGG
Gate Voltage
VDD<7.2V, Pin=0mW
4
V
Pin
Input Power
70
mW
Pout
Output Power
f=806-870MHz,
ZG=ZL=50Ω
5
W
Tcase(OP)
Operation Case Temperature Range
-30 to +90
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
806
870
MHz
Pout
Output Power
VDD=7.2V,VGG=3.5V, Pin=50mW
3.6
W
η
T
Total Efficiency
32
%
2fo
2
nd Harmonic
-30
dBc
ρ
in
Input VSWR
4:1
IGG
Gate Current
Pout=3W (VGG control),
VDD=7.2V,
Pin=50mW
1
mA
Stability
VDD=4.0-9.2V, Pin=25-70mW, Pout<5W (VGG control),
Load VSWR=4:1
No parasitic oscillation
Load VSWR Tolerance
VDD=9.2V, Pin=50mW, Pout=3.6W (VGG control),
Load VSWR=20:1
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.


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