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PHW45NQ10T Datasheet(PDF) 3 Page - NXP Semiconductors |
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PHW45NQ10T Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 11 page  Philips Semiconductors Product specification N-channel TrenchMOS ™ transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T j = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current - - 47 A (body diode) I SM Pulsed source current (body - - 188 A diode) V SD Diode forward voltage I F = 25 A; VGS = 0 V - 0.87 1.2 V t rr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 82 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 25 V - 0.26 - µC August 1999 3 Rev 1.000 |
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